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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1075 2SA1076 DESCRIPTION *With MT-200 package *Complement to type 2SC2525,2SC2526 *Fast switching speed *Excellent safe operating area APPLICATIONS *High frequency power amplifiers *Audio power amplifiers *Switching regulators *DC-DC converters PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION Absolute maximum ratings(Ta=25) SYMBOL PARAMETER 2SA1075 VCBO Collector-base voltage 2SA1076 2SA1075 VCEO Collector-emitter voltage 2SA1076 VEBO IC PC Tj Tstg Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -160 -7 -12 120 150 -65~150 V V A W Open emitter -160 -120 V V CONDITIONS VALUE -120 UNIT V Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER 2SA1075 IC=-1mA ;RBE= 2SA1076 2SA1075 IC=-50A; IE=0 2SA1076 IE=-50A; IC=0 IC=-5A;IB=-0.5A IC=-5A;VCE=-5V 2SA1075 ICBO Collector cut-off current 2SA1076 2SA1075 ICEO Collector cut-off current 2SA1076 IEBO hFE-1 hFE-2 Cob fT Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency VCE=-160V; IB=0 VEB=-7V; IC=0 IC=-1A ; VCE=-5V IC=-7A ; VCE=-5V IE=0 ; VCB=-10V IC=-1A ; VCE=-10V VCB=-160V; IE=0 VCE=-120V; IB=0 VCB=-120V; IE=0 CONDITIONS 2SA1075 2SA1076 MIN -120 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -160 -120 V -160 -7 -1.8 -1.7 V V V V(BR)CBO Collector-base breakdown voltage V(BR)EBO VCEsat VBE Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage -50 A -1 mA -50 60 40 300 60 200 A pF MHz Switching times tr ts tf Rise time Storage time Fall time IC=-7.5A;RL=4 IB1=-IB2=-0.75A 0.15 0.50 0.11 s s s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1075 2SA1076 Fig.2 outline dimensions 3 |
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